Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB vs Mushkin MRA4S300GJJM16G 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

总分

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 78

左右 62% 更低的延时

Mushkin MRA4S300GJJM16G 16GB

需要考虑的原因
Mushkin MRA4S300GJJM16G 16GB

报告一个错误

更快的读取速度，GB/s

12.1 11.2

测试中的平均数值
更快的写入速度，GB/s

10.3 8.7

测试中的平均数值
更高的内存带宽，mbps

19200 14200

左右 1.35 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

Mushkin MRA4S300GJJM16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 78
读取速度，GB/s

11.2 12.1
写入速度，GB/s

8.7 10.3
内存带宽，mbps

14200 19200

Other

描述

PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2458 2113

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2400C12D4/16GX 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C

Mushkin MRA4S300GJJM16G 16GB

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Crucial Technology BL8G32C16U4W.M8FE 8GB

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Crucial Technology BL16G36C16U4R.M16FE1 16GB

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Gloway International (HK) STK4U2400D17082C 8GB

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A-DATA Technology DQKD1A08 1GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX2133C11D3/4GX 4GB

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Mushkin 994083 4GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology BL8G36C16U4RL.M8FE1 8GB

Crucial Technology BL8G36C16U4RL.M8FE1 8GB