Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB
Mushkin MRA4S300GJJM16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB vs Mushkin MRA4S300GJJM16G 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB

总分
star star star star star
Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

差异

  • 低于PassMark测试中的延时,ns
    30 left arrow 78
    左右 62% 更低的延时
  • 更快的读取速度,GB/s
    12.1 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度,GB/s
    10.3 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 14200
    左右 1.35 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB
Mushkin MRA4S300GJJM16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    30 left arrow 78
  • 读取速度,GB/s
    11.2 left arrow 12.1
  • 写入速度,GB/s
    8.7 left arrow 10.3
  • 内存带宽,mbps
    14200 left arrow 19200
Other
  • 描述
    PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2458 left arrow 2113
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最新比较