PNY Electronics PNY 2GB vs SK Hynix HMA82GR8AMR4N-TF 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时
更快的读取速度，GB/s

13.8 10.4

测试中的平均数值
更快的写入速度，GB/s

8.4 7.9

测试中的平均数值

SK Hynix HMA82GR8AMR4N-TF 16GB

需要考虑的原因
SK Hynix HMA82GR8AMR4N-TF 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

SK Hynix HMA82GR8AMR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 37
读取速度，GB/s

13.8 10.4
写入速度，GB/s

8.4 7.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

SK Hynix HMA82GR8AMR4N-TF 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Corsair CMK16GX4M2F4400C19 8GB

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SK Hynix HMT425S6CFR6A-PB 2GB

Kingston KHX2666C13D4/4GX 4GB

Kingston KHX2666C13D4/4GX 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Kingston KHX2400C1C14/16G 16GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

Mushkin MR[A/B]4U300JJJM16G 16GB

Mushkin MR[A/B]4U300JJJM16G 16GB