PNY Electronics PNY 2GB vs Tanbassh 8G 2666MHZ 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 50

左右 46% 更低的延时
更快的读取速度，GB/s

13.8 10.2

测试中的平均数值
更快的写入速度，GB/s

8.4 7.5

测试中的平均数值

Tanbassh 8G 2666MHZ 8GB

需要考虑的原因
Tanbassh 8G 2666MHZ 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Tanbassh 8G 2666MHZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 50
读取速度，GB/s

13.8 10.2
写入速度，GB/s

8.4 7.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 2064

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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