PUSKILL DDR3 1600 8G 8GB vs Crucial Technology BLS4G4D26BFSC.8FD2 4GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 38

左右 -81% 更低的延时
更快的读取速度，GB/s

18.7 16.7

测试中的平均数值
更快的写入速度，GB/s

13.6 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 21
读取速度，GB/s

16.7 18.7
写入速度，GB/s

10.0 13.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 2807

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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King Tiger Technology Tigo-2400MHz-8G 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Patriot Memory (PDP Systems) PSD48G26662 8GB

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PUSKILL DDR3 1600 8G 8GB

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Crucial Technology BLS4G4D26BFSC.8FD2 4GB

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SK Hynix HMT325U6EFR8C-PB 2GB

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Kingston KVR16N11/8-SP 8GB

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Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F4-3333C16-16GTZB 16GB

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Kingston 9905624-051.A00G 8GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

Corsair CMZ8GX3M2A1600C9G 4GB

Corsair CMZ8GX3M2A1600C9G 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston KHX2800C14D4/4GX 4GB

Kingston KHX2800C14D4/4GX 4GB