PUSKILL DDR3 1600 8G 8GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 101

左右 62% 更低的延时
更快的读取速度，GB/s

16.7 12.1

测试中的平均数值
更快的写入速度，GB/s

10.0 6.7

测试中的平均数值

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

需要考虑的原因
InnoDisk Corporation M4C0-AGS1TCSJ 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 101
读取速度，GB/s

16.7 12.1
写入速度，GB/s

10.0 6.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2753 1382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMW16GX4M2E3200C16 8GB

Corsair CMW16GX4M2E3200C16 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston KHX3000C15D4/4GX 4GB

Kingston KHX3000C15D4/4GX 4GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-4000C15-8GTRG 8GB

G Skill Intl F4-4000C15-8GTRG 8GB

Kingston HX424C15FB/16 16GB

Kingston HX424C15FB/16 16GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK64GX4M8X3600C18 8GB

Corsair CMK64GX4M8X3600C18 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Apacer Technology 78.C2GFL.C720B 8GB

Apacer Technology 78.C2GFL.C720B 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

DSL Memory D4SS12082SH21A-A 8GB

DSL Memory D4SS12082SH21A-A 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-2666C15-8GVK 8GB

G Skill Intl F4-2666C15-8GVK 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HMA451R7AFR8N-TF 4GB

SK Hynix HMA451R7AFR8N-TF 4GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Kingston 9905665-020.A00G 4GB

Kingston 9905665-020.A00G 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston X2YH1K-MIE 16GB

Kingston X2YH1K-MIE 16GB