PUSKILL DDR3 1600 8G 8GB vs OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 39

左右 3% 更低的延时
更快的读取速度，GB/s

16.7 15.1

测试中的平均数值

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

需要考虑的原因
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

报告一个错误

更快的写入速度，GB/s

12.6 10.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 39
读取速度，GB/s

16.7 15.1
写入速度，GB/s

10.0 12.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2753 3000

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

G Skill Intl F4-3200C14-8GTZKW 8GB

G Skill Intl F4-3200C14-8GTZKW 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Panram International Corporation PUD43000C164G2NJK 4GB

Panram International Corporation PUD43000C164G2NJK 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Kingston KCRXJ6-MIE 16GB

Kingston KCRXJ6-MIE 16GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905678-033.A00G 4GB

Kingston 9905678-033.A00G 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston KHX4266C19D4/8GX 8GB

Kingston KHX4266C19D4/8GX 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CM4X16GE2666C16K4 16GB

Corsair CM4X16GE2666C16K4 16GB

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Kingston ACR26D4U9D8ME-16 16GB

Kingston ACR26D4U9D8ME-16 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology BL32G36C16U4B.M16FB1 32GB

Crucial Technology BL32G36C16U4B.M16FB1 32GB