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Qimonda 72T128420EFA3SB2 1GB
Corsair CMK16GX4M2Z3600C18 8GB

Qimonda 72T128420EFA3SB2 1GB vs Corsair CMK16GX4M2Z3600C18 8GB

总分
star star star star star
Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分
star star star star star
Corsair CMK16GX4M2Z3600C18 8GB

Corsair CMK16GX4M2Z3600C18 8GB

差异 规格 评论

差异

Qimonda 72T128420EFA3SB2 1GB 需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,069.2 left arrow 15.4
    测试中的平均数值
Corsair CMK16GX4M2Z3600C18 8GB 需要考虑的原因
Corsair CMK16GX4M2Z3600C18 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 106
    左右 -279% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Qimonda 72T128420EFA3SB2 1GB
Corsair CMK16GX4M2Z3600C18 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    106 left arrow 28
  • 读取速度，GB/s
    3,273.7 left arrow 18.2
  • 写入速度，GB/s
    2,069.2 left arrow 15.4
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    734 left arrow 3503

Qimonda 72T128420EFA3SB2 1GB RAM的比较

Qimonda 72T128401EFA3SC2 512MB
Kingston KP6FH5-MIE 32GB

Corsair CMK16GX4M2Z3600C18 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Corsair CMK16GX4M2Z3600C18 8GB
Corsair CMK16GX4M2Z3600C18 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Mushkin 99[2/7/4]199[F/T] 8GB
Mushkin 99[2/7/4]199[F/T] 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C14-16GVR 16GB
G Skill Intl F4-3200C14-16GVR 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-3200C16-8GSXKB 8GB
G Skill Intl F4-3200C16-8GSXKB 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK16GX4M2A2666C16 8GB
Corsair CMK16GX4M2A2666C16 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMR16GX4M2C3200C16 8GB
Corsair CMR16GX4M2C3200C16 8GB
内存RAM