Samsung 1600 CL10 Series 8GB vs SK Hynix HMAA1GU6CJR6N-XN 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 34

左右 26% 更低的延时

SK Hynix HMAA1GU6CJR6N-XN 8GB

需要考虑的原因
SK Hynix HMAA1GU6CJR6N-XN 8GB

报告一个错误

更快的读取速度，GB/s

16.7 16.1

测试中的平均数值
更快的写入速度，GB/s

10.6 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 34
读取速度，GB/s

16.1 16.7
写入速度，GB/s

10.1 10.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2764 2789

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Apacer Technology 78.B1GN3.4032B 4GB

Apacer Technology 78.B1GN3.4032B 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F4-4000C17-8GTZR 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston 9965662-018.A00G 32GB

Kingston 9965662-018.A00G 32GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMD16GX4M4B3400C16 4GB

Corsair CMD16GX4M4B3400C16 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Samsung M378B5173EB0-YK0 4GB

Samsung M378B5173EB0-YK0 4GB

Corsair CM4X16GE2133C15S2 16GB

Corsair CM4X16GE2133C15S2 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB