Qimonda 72T128420EFA3SB2 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

总分

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

差异规格评论

差异

Qimonda 72T128420EFA3SB2 1GB

需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB

报告一个错误

低于PassMark测试中的延时，ns

106 122

左右 13% 更低的延时

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

报告一个错误

更快的读取速度，GB/s

9.4 3

测试中的平均数值
更快的写入速度，GB/s

5.8 2,069.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Qimonda 72T128420EFA3SB2 1GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

106 122
读取速度，GB/s

3,273.7 9.4
写入速度，GB/s

2,069.2 5.8
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

734 1411

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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