Ramaxel Technology RMR5040ED58E9W1600 4GB vs Crucial Technology CT4G4SFS824A.M8FB 4GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Crucial Technology CT4G4SFS824A.M8FB 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Crucial Technology CT4G4SFS824A.M8FB 4GB

需要考虑的原因
Crucial Technology CT4G4SFS824A.M8FB 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 43

左右 -72% 更低的延时
更快的读取速度，GB/s

15.1 13.2

测试中的平均数值
更快的写入速度，GB/s

11.4 9.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 25
读取速度，GB/s

13.2 15.1
写入速度，GB/s

9.3 11.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2285 2240

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Crucial Technology CT8G4SFS6266.M4FB 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

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Kingmax Semiconductor GLLF62F-DA---------- 4GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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A-DATA Technology VDQVE1B16 2GB

Kllisre 0000 8GB

Kllisre 0000 8GB