Ramaxel Technology RMR5040ED58E9W1600 4GB vs Samsung M378A5244CB0-CTD 4GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更快的读取速度，GB/s

15.8 13.2

测试中的平均数值
更快的写入速度，GB/s

11.8 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Samsung M378A5244CB0-CTD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 36
读取速度，GB/s

13.2 15.8
写入速度，GB/s

9.3 11.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2285 2497

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A5244CB0-CTD 4GB

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Kingston 9905403-444.A00LF 4GB

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Kingston KHX2133C11D3/4GX 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Super Talent F24EA8GS 8GB

Super Talent F24EA8GS 8GB

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Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB