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PNY Electronics PNY 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
比较
PNY Electronics PNY 2GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
总分
PNY Electronics PNY 2GB
总分
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
37
左右 27% 更低的延时
需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
报告一个错误
更快的读取速度,GB/s
16
13.8
测试中的平均数值
更快的写入速度,GB/s
12.6
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
37
读取速度,GB/s
13.8
16.0
写入速度,GB/s
8.4
12.6
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2274
2808
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
A-DATA Technology AM2L16BC4R1-B0AS 4GB
OCMEMORY OCM2933CL16-16GBH 16GB
Kingston 9905584-016.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Kllisre KRE-D3U1600M/8G 8GB
G Skill Intl F4-2666C18-8GRS 8GB
Kingston 99U5474-022.A00LF 2GB
G Skill Intl F4-3300C16-4GRKD 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-2800C17-8GIS 8GB
Unifosa Corporation HU564404EP0200 4GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF3200C18D4/8G 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4800C20-16GTZR 16GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMW128GX4M8C3200C16 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
报告一个错误
×
Bug description
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