RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
比较
Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB
总分
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
总分
Micron Technology 4ATF51264AZ-2G3B1 4GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB
报告一个错误
低于PassMark测试中的延时,ns
34
42
左右 -24% 更低的延时
更快的读取速度,GB/s
15.6
13.3
测试中的平均数值
更快的写入速度,GB/s
11.2
7.8
测试中的平均数值
规格
完整的技术规格清单
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
42
34
读取速度,GB/s
13.3
15.6
写入速度,GB/s
7.8
11.2
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2181
2468
Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 4ATF51264AZ-2G3B1 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3466C16-4GVK 4GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M393A2K43BB1-CPB 16GB
Kingston 9965516-112.A00LF 16GB
Teikon TMA851U6AFR6N-UHHC 4GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-8GTZKY 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
G Skill Intl F4-4000C14-16GTZR 16GB
Samsung M391A2K43BB1-CPB 16GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9965604-027.D00G 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
Kingston KVR533D2N4 512MB
Kingston 9905622-051.A00G 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston KH280C14D4/8X 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M471A5244BB0-CRC 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
报告一个错误
×
Bug description
Source link