Ramaxel Technology RMT3010EC58E8F1333 2GB vs Team Group Inc. DDR4 2666 8GB

总分

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

总分

Team Group Inc. DDR4 2666 8GB

Team Group Inc. DDR4 2666 8GB

差异规格评论

差异

Ramaxel Technology RMT3010EC58E8F1333 2GB

需要考虑的原因
Ramaxel Technology RMT3010EC58E8F1333 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时
更快的读取速度，GB/s

13.5 13

测试中的平均数值

Team Group Inc. DDR4 2666 8GB

需要考虑的原因
Team Group Inc. DDR4 2666 8GB

报告一个错误

更快的写入速度，GB/s

10.4 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3010EC58E8F1333 2GB

Team Group Inc. DDR4 2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

13.5 13.0
写入速度，GB/s

7.8 10.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1932 2757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 76.C102G.D170B 8GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Team Group Inc. DDR4 2666 8GB

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Samsung M391B5673EH1-CH9 2GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingmax Semiconductor FLFE85F-C8KF9 2GB

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Corsair CM2X1024-8500C5D 1GB

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Mushkin 99[2/7/4]192[F/T] 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Kingston XK2M26-MIE-NX 16GB

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Kingston 9965516-049.A00LF 8GB

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Corsair CMU16GX4M2A2666C16 8GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB