Ramaxel Technology RMT3020EC58E9F1333 4GB vs Micron Technology 18ASF2G72AZ-2G6D1 16GB

总分

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

差异规格评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB

需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB

报告一个错误

Micron Technology 18ASF2G72AZ-2G6D1 16GB

需要考虑的原因
Micron Technology 18ASF2G72AZ-2G6D1 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 -16% 更低的延时
更快的读取速度，GB/s

16.8 9

测试中的平均数值
更快的写入速度，GB/s

12.8 5.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3020EC58E9F1333 4GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 25
读取速度，GB/s

9.0 16.8
写入速度，GB/s

5.7 12.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1274 2989

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

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Kingston 9905403-444.A00LF 4GB

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Corsair CMR16GX4M2C3000C16 8GB