Ramaxel Technology RMT3160ED58E9W1600 4GB vs Inmos + 256MB

总分

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分

Inmos + 256MB

Inmos + 256MB

差异规格评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB

报告一个错误

更快的读取速度，GB/s

12.3 11.5

测试中的平均数值

Inmos + 256MB

需要考虑的原因
Inmos + 256MB

报告一个错误

低于PassMark测试中的延时，ns

30 40

左右 -33% 更低的延时
更快的写入速度，GB/s

9.1 7.8

测试中的平均数值
更高的内存带宽，mbps

16800 12800

左右 1.31 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3160ED58E9W1600 4GB

Inmos + 256MB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 30
读取速度，GB/s

12.3 11.5
写入速度，GB/s

7.8 9.1
内存带宽，mbps

12800 16800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz no data
排名PassMark (越多越好)

1806 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMA82GR7JJR8N-VK 16GB

SK Hynix HMA82GR7JJR8N-VK 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 9905630-048.A00G 16GB

Kingston 9905630-048.A00G 16GB

Strontium SRT8G86U1-P9H 8GB

Strontium SRT8G86U1-P9H 8GB

Samsung M393B2G70QH0-CMA 16GB

Samsung M393B2G70QH0-CMA 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Dust Leopard DDR4-2400 CL17 8GB 8GB

Dust Leopard DDR4-2400 CL17 8GB 8GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9905663-008.A00G 16GB

Kingston 9905663-008.A00G 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB