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Ramaxel Technology RMT3170EB68F9W1600 4GB
Corsair CMW16GX4M2A2666C16 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Corsair CMW16GX4M2A2666C16 8GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Corsair CMW16GX4M2A2666C16 8GB

Corsair CMW16GX4M2A2666C16 8GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
Corsair CMW16GX4M2A2666C16 8GB 需要考虑的原因
Corsair CMW16GX4M2A2666C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 43
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Corsair CMW16GX4M2A2666C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 30
  • 读取速度，GB/s
    11.4 left arrow 16.8
  • 写入速度，GB/s
    7.7 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 3254

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Corsair CMW16GX4M2A2666C16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
内存RAM
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
SK Hynix HMA81GU6DJR8N-WM 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMK8GX4M2C3000C16 4GB
Corsair CMK8GX4M2C3000C16 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Corsair CMG16GX4M2D3600C18 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Samsung M471A5143EB0-CPB 4GB
内存RAM
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内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
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SK Hynix HMA81GU6JJR8N-VK 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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SK Hynix HMA851S6AFR6N-UH 4GB
内存RAM
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内存RAM
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PNY Electronics PNY 2GB
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SpecTek Incorporated ?????????????????? 2GB
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内存RAM
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Samsung M3 78T2953EZ3-CF7 1GB
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A-DATA Technology AO2P21FC8R2-BRGS 8GB
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