Ramaxel Technology RMT3170EB68F9W1600 4GB vs G Skill Intl F4-2400C15-4GNT 4GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

G Skill Intl F4-2400C15-4GNT 4GB

G Skill Intl F4-2400C15-4GNT 4GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

G Skill Intl F4-2400C15-4GNT 4GB

需要考虑的原因
G Skill Intl F4-2400C15-4GNT 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 43

左右 -16% 更低的延时
更快的读取速度，GB/s

15.1 11.4

测试中的平均数值
更快的写入速度，GB/s

11.2 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

G Skill Intl F4-2400C15-4GNT 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 37
读取速度，GB/s

11.4 15.1
写入速度，GB/s

7.7 11.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1823 2824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4SFD824A.C16FDD2 8GB

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G Skill Intl F4-2400C15-4GNT 4GB

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Lexar Co Limited LD4AS008G-H2666GST 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Samsung 1600 CL10 Series 8GB

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Samsung M378B5273EB0-CK0 4GB

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Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Corsair CM4B8G2J3000K15K 8GB

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Essencore Limited IM44GU48N21-FFFHM 4GB

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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB