Ramaxel Technology RMT3170EB68F9W1600 4GB vs Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 43

左右 -87% 更低的延时
更快的读取速度，GB/s

15.3 11.4

测试中的平均数值
更快的写入速度，GB/s

9.5 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 23
读取速度，GB/s

11.4 15.3
写入速度，GB/s

7.7 9.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1823 2619

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF4G72LZ-2G3A1 32GB

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PNY Electronics 64C0MHHHJ-HS 4GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Smart Modular SF464128CK8I6GKSEG 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Samsung M471B5673EH1-CH9 2GB

Samsung M471B5673EH1-CH9 2GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB