Ramos Technology EWB8GB681CA3-16IC 8GB vs G Skill Intl F4-2400C17-4GVR 4GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

更快的读取速度，GB/s

15.3 15.2

测试中的平均数值

G Skill Intl F4-2400C17-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2400C17-4GVR 4GB

报告一个错误

更快的写入速度，GB/s

12.0 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-2400C17-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 25
读取速度，GB/s

15.3 15.2
写入速度，GB/s

9.8 12.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2646 2740

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C17-4GVR 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Nanya Technology M2F4G64CB8HB9N-CG 4GB

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Corsair CMSX32GX4M2A3200C22 16GB

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Kingston 9905316-106.A02LF 1GB

Hyundai Inc GR26C16S8K2HU416 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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G Skill Intl F4-2400C15-4GRR 4GB

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Kingston ACR256X64D3S1333C9 2GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB