Ramos Technology EWB8GB681CA3-16IC 8GB vs Samsung M378A1K43CB2-CRC 8GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 34

左右 26% 更低的延时

Samsung M378A1K43CB2-CRC 8GB

需要考虑的原因
Samsung M378A1K43CB2-CRC 8GB

报告一个错误

更快的读取速度，GB/s

15.4 15.3

测试中的平均数值
更快的写入速度，GB/s

10.7 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

Samsung M378A1K43CB2-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 34
读取速度，GB/s

15.3 15.4
写入速度，GB/s

9.8 10.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2646 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK64GX4M2C3200C16 32GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Corsair CMR64GX4M4K3600C18 16GB

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G Skill Intl F4-3200C16-4GTZ 4GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Samsung M471B5273DH0-CH9 4GB

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Crucial Technology CT16G4SFD8266.C16FD1 16GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

SK Hynix HMA81GS6AFR8N-VK 8GB

SK Hynix HMA81GS6AFR8N-VK 8GB

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SK Hynix HMA81GS6DJR8N-XN 8GB

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Nanya Technology NT4GC64C88B1NS-DI 4GB

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V-GEN D4R8GL24A8R 8GB