Samsung 1600 CL10 Series 8GB vs Corsair CMW16GX4M2D3600C18 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMW16GX4M2D3600C18 8GB

Corsair CMW16GX4M2D3600C18 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时

Corsair CMW16GX4M2D3600C18 8GB

需要考虑的原因
Corsair CMW16GX4M2D3600C18 8GB

报告一个错误

更快的读取速度，GB/s

18.3 16.1

测试中的平均数值
更快的写入速度，GB/s

15.1 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMW16GX4M2D3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

16.1 18.3
写入速度，GB/s

10.1 15.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3529

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology 4ATF1G64HZ-3G2E2 8GB

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Corsair CMW16GX4M2D3600C18 8GB

Corsair CMW16GX4M2D3600C18 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

V-GEN D4H8GS24A8 8GB

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Patriot Memory (PDP Systems) 4266 C18 Series 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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SpecTek Incorporated ?????????????????? 2GB

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Samsung M393B1K73DH0-CK0 8GB

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Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMD64GX4M8B3200C16 8GB

Corsair CMD64GX4M8B3200C16 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Corsair CMSX16GX4M2A3200C22 8GB

Corsair CMSX16GX4M2A3200C22 8GB

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Kingston 9905471-001.A01LF 2GB

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Kingston 9965604-008.D00G 16GB