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Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z4000C18 8GB
比较
Samsung 1600 CL10 Series 8GB vs Corsair CMW16GX4M2Z4000C18 8GB
总分
Samsung 1600 CL10 Series 8GB
总分
Corsair CMW16GX4M2Z4000C18 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
33
左右 24% 更低的延时
需要考虑的原因
Corsair CMW16GX4M2Z4000C18 8GB
报告一个错误
更快的读取速度,GB/s
18.4
16.1
测试中的平均数值
更快的写入速度,GB/s
17.2
10.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z4000C18 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
33
读取速度,GB/s
16.1
18.4
写入速度,GB/s
10.1
17.2
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2764
3738
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z4000C18 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z4000C18 8GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-4000C18-8GVK 8GB
Kingston 9965516-112.A00LF 16GB
Kingston KHX2666C15/16GX 16GB
Samsung M3 78T5663EH3-CF7 2GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SK Hynix HMA81GS6CJR8N-XN 8GB
Kingston 99U5403-036.A00G 4GB
Kingston KHX2133C14D4/4G 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9965662-008.A01G 16GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston 9905734-063.A00G 32GB
Kingston 9905471-002.A00LF 2GB
Kingston 9905701-018.A00G 16GB
TwinMOS 8DPT5MK8-TATP 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C18-16GTRS 16GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
AMD R7416G2400U2S 16GB
Samsung M471B5173DB0-YK0 4GB
Samsung M378A2K43BB1-CPB 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2666C19-16GIS 16GB
报告一个错误
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Bug description
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