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Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-16GTZSW 16GB
比较
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3200C14-16GTZSW 16GB
总分
Samsung 1600 CL10 Series 8GB
总分
G Skill Intl F4-3200C14-16GTZSW 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
26
左右 4% 更低的延时
需要考虑的原因
G Skill Intl F4-3200C14-16GTZSW 16GB
报告一个错误
更快的读取速度,GB/s
20.6
16.1
测试中的平均数值
更快的写入速度,GB/s
16.7
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-16GTZSW 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
26
读取速度,GB/s
16.1
20.6
写入速度,GB/s
10.1
16.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2764
4084
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-16GTZSW 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5471-012.A00LF 4GB
Corsair CMK128GX4M4A2666C16 32GB
A-DATA Technology DQKD1A08 1GB
King Tiger Technology Tigo-2400MHz-8G 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-16GTZSW 16GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
G Skill Intl F4-3200C15-16GTZSW 16GB
Kingston 99U5471-030.A00LF 8GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Essencore Limited KD44GU480-26N160T 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston 9965600-005.A01G 16GB
A-DATA Technology DDR4 2666 8GB
V-GEN D4H8GS24A8 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M392A4K40BM0-CRC 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX3000C15D4/8GX 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
报告一个错误
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Bug description
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