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Samsung 1600 CL10 Series 8GB
KingSpec KingSpec 16GB
比较
Samsung 1600 CL10 Series 8GB vs KingSpec KingSpec 16GB
总分
Samsung 1600 CL10 Series 8GB
总分
KingSpec KingSpec 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
更快的读取速度,GB/s
16.1
15.5
测试中的平均数值
更快的写入速度,GB/s
10.1
7.7
测试中的平均数值
需要考虑的原因
KingSpec KingSpec 16GB
报告一个错误
低于PassMark测试中的延时,ns
22
25
左右 -14% 更低的延时
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
KingSpec KingSpec 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
22
读取速度,GB/s
16.1
15.5
写入速度,GB/s
10.1
7.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2764
2511
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
KingSpec KingSpec 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMSX4GX3M1A1600C9 4GB
Kingston ACR26D4S9S8HJ-8 8GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-4000C18-32GTRS 32GB
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HMA82GS6DJR8N-WM 16GB
Kingston 99U5584-004.A00LF 4GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
A-DATA Technology VDQVE1B16 2GB
Team Group Inc. 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avant Technology J642GU42J7240N2 16GB
Kingston 9905403-437.A01LF 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
A-DATA Technology VDQVE1B16 2GB
Corsair CM4X8GF2666C16K4 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
SK Hynix HMT425S6AFR6A-PB 2GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Samsung DDR3 8GB 1600MHz 8GB
Team Group Inc. DDR4 3000 4GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
报告一个错误
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Bug description
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