Samsung 1600 CL10 Series 8GB vs Kingston ACR24D4S7S1MB-4 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston ACR24D4S7S1MB-4 4GB

Kingston ACR24D4S7S1MB-4 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 4% 更低的延时
更快的读取速度，GB/s

16.1 14.5

测试中的平均数值

Kingston ACR24D4S7S1MB-4 4GB

需要考虑的原因
Kingston ACR24D4S7S1MB-4 4GB

报告一个错误

更快的写入速度，GB/s

10.3 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston ACR24D4S7S1MB-4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 26
读取速度，GB/s

16.1 14.5
写入速度，GB/s

10.1 10.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2764 2194

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Qimonda 64T128020EDL2.5C2 1GB

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Corsair CM4X8GF2133C13K4 8GB

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G Skill Intl F4-2400C15-8GNS 8GB

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Apacer Technology 78.01GA0.9K5 1GB

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EVGA 16G-D3-1600-MR 8GB

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G Skill Intl F4-2666C19-8GSXK 8GB

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Samsung M378B5673FH0-CH9 2GB

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Corsair CMWX8GD3000C15W4 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Samsung M471B5273DH0-CH9 4GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Kingston 9965596-016.B01G 8GB

Elpida EBJ10UE8BDF0-DJ-F 1GB

Elpida EBJ10UE8BDF0-DJ-F 1GB

Samsung M378B2873FH0-CH9 1GB

Samsung M378B2873FH0-CH9 1GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

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Samsung M471B5273EB0-CK0 4GB

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Kingston MSI26D4S9S8ME-8 8GB

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Kingston ACR512X64D3S13C9G 4GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB