Samsung 1600 CL10 Series 8GB vs Kingston ACR26D4U9S1KA-4 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston ACR26D4U9S1KA-4 4GB

Kingston ACR26D4U9S1KA-4 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 24% 更低的延时
更快的读取速度，GB/s

16.1 14.6

测试中的平均数值

Kingston ACR26D4U9S1KA-4 4GB

需要考虑的原因
Kingston ACR26D4U9S1KA-4 4GB

报告一个错误

更快的写入速度，GB/s

11.9 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston ACR26D4U9S1KA-4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 33
读取速度，GB/s

16.1 14.6
写入速度，GB/s

10.1 11.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMA81GS6CJR8N-UH 8GB

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Samsung 1600 CL10 Series 8GB

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A-DATA Technology DDR4 2133 2OZ 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology BLS8G4D240FSE.16FBD 8GB

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AMD R9S48G3206U2S 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

Kingston 9965604-033.D00G 16GB

Kingston 9965604-033.D00G 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMW16GX4M2D3600C18 8GB

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Kingston 99U5429-007.A00LF 2GB

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB