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Samsung 1600 CL10 Series 8GB
Kingston KYXC0V-MIH 16GB

Samsung 1600 CL10 Series 8GB vs Kingston KYXC0V-MIH 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Kingston KYXC0V-MIH 16GB

Kingston KYXC0V-MIH 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 34
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.1
    测试中的平均数值
Kingston KYXC0V-MIH 16GB 需要考虑的原因
Kingston KYXC0V-MIH 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Kingston KYXC0V-MIH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 34
  • 读取速度，GB/s
    16.1 left arrow 14.0
  • 写入速度，GB/s
    10.1 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2365

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Kingston KYXC0V-MIH 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA81GU6CJR8N-XN 8GB
SK Hynix HMA81GU6CJR8N-XN 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
内存RAM
G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F3-1600C11-4GIS 4GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Gloway International (HK) STK4U2400D15082C 8GB
Gloway International (HK) STK4U2400D15082C 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C15-16GVR 16GB
G Skill Intl F4-3200C15-16GVR 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMV16GX4M1A2133C15 16GB
Corsair CMV16GX4M1A2133C15 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Kingston MSI24D4S7D8MHMH6 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CM4X4GF2400C16S2 4GB
Corsair CM4X4GF2400C16S2 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5643-001.A00G 8GB
Kingston 99U5643-001.A00G 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
内存RAM