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Samsung 1600 CL10 Series 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB

Samsung 1600 CL10 Series 8GB vs Lexar Co Limited LD4AU008G-H3200GST 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 34
    左右 26% 更低的延时
Lexar Co Limited LD4AU008G-H3200GST 8GB 需要考虑的原因
Lexar Co Limited LD4AU008G-H3200GST 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.9 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 34
  • 读取速度，GB/s
    16.1 left arrow 19.9
  • 写入速度，GB/s
    10.1 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3271

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX3000C16D4/32GX 32GB
Kingston KHX3000C16D4/32GX 32GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Kingston 9905711-035.A00G 8GB
Kingston 9905711-035.A00G 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Avant Technology J641GU42J5213N0 8GB
Avant Technology J641GU42J5213N0 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston 99U5678-029.A00G 8GB
Kingston 99U5678-029.A00G 8GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Corsair CM4X4GF2400C16S2 4GB
Corsair CM4X4GF2400C16S2 4GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4400C19-16GTZR 16GB
G Skill Intl F4-4400C19-16GTZR 16GB
内存RAM