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Samsung 1600 CL10 Series 8GB
Transcend Information TS512MSH64V4H 4GB

Samsung 1600 CL10 Series 8GB vs Transcend Information TS512MSH64V4H 4GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 45
    左右 44% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 5.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.4
    测试中的平均数值
Transcend Information TS512MSH64V4H 4GB 需要考虑的原因
Transcend Information TS512MSH64V4H 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Transcend Information TS512MSH64V4H 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 45
  • 读取速度，GB/s
    16.1 left arrow 5.3
  • 写入速度，GB/s
    10.1 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 1535

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Transcend Information TS512MSH64V4H 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Transcend Information TS2GSH64V1B 16GB
Transcend Information TS2GSH64V1B 16GB
内存RAM
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Corsair CMK16GX4M4B3200C16 4GB
内存RAM