Samsung 16KTF1G64AZ-1G9P1 8GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分

Samsung 16KTF1G64AZ-1G9P1 8GB

Samsung 16KTF1G64AZ-1G9P1 8GB

总分

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异规格评论

差异

Samsung 16KTF1G64AZ-1G9P1 8GB

需要考虑的原因
Samsung 16KTF1G64AZ-1G9P1 8GB

报告一个错误

Chun Well Technology Holding Limited D4U0826190B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 65

左右 -124% 更低的延时
更快的读取速度，GB/s

16.7 6.8

测试中的平均数值
更快的写入速度，GB/s

12.9 5.4

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

Samsung 16KTF1G64AZ-1G9P1 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 29
读取速度，GB/s

6.8 16.7
写入速度，GB/s

5.4 12.9
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1370 3273

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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