Samsung 16KTF1G64AZ-1G9P1 8GB vs Crucial Technology BLE4G4D32AEEA.K8FD 4GB

总分

Samsung 16KTF1G64AZ-1G9P1 8GB

Samsung 16KTF1G64AZ-1G9P1 8GB

总分

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

差异规格评论

差异

Samsung 16KTF1G64AZ-1G9P1 8GB

需要考虑的原因
Samsung 16KTF1G64AZ-1G9P1 8GB

报告一个错误

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

需要考虑的原因
Crucial Technology BLE4G4D32AEEA.K8FD 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 65

左右 -183% 更低的延时
更快的读取速度，GB/s

17.3 6.8

测试中的平均数值
更快的写入速度，GB/s

13.0 5.4

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Samsung 16KTF1G64AZ-1G9P1 8GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 23
读取速度，GB/s

6.8 17.3
写入速度，GB/s

5.4 13.0
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1370 2993

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最新比较

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Kingston ACR16D3LS1NGG/4G 4GB

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Kingston KHX2800C14D4/8GX 8GB

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Kingston KF3200C16D4/32GX 32GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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AMD R5316G1609U2K 8GB

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SK Hynix HMA81GS6CJR8N-UH 8GB

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Patriot Memory (PDP Systems) 2400 C16 Series 16GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

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Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

V-Color Technology Inc. TL48G24S815RGB 8GB

V-Color Technology Inc. TL48G24S815RGB 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-3466C16-8GVK 8GB

G Skill Intl F4-3466C16-8GVK 8GB