Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology BLS8G4S240FSDK.8FBD 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSDK.8FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

15.5 14.9

测试中的平均数值
更快的写入速度，GB/s

12.2 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

14.9 15.5
写入速度，GB/s

9.6 12.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 2819

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5584-004.A00LF 4GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Corsair CMK16GX4M2A2133C13 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

AMD R534G1601U1S-UO 4GB

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Patriot Memory (PDP Systems) PSD34G13332S 4GB

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Kingston ACR16D3LS1KBG/8G 8GB

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Crucial Technology BL16G32C16U4WL.M16FE 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Kingston 99U5584-007.A00LF 4GB

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Samsung M471A1G43EB1-CRC 8GB

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