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Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

总分
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

差异 规格 评论

差异

Samsung DDR3 8GB 1600MHz 8GB 需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 7.0
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 43
    左右 -23% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 35
  • 读取速度，GB/s
    14.9 left arrow 10.0
  • 写入速度，GB/s
    9.6 left arrow 7.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2506 left arrow 2068

Samsung DDR3 8GB 1600MHz 8GB RAM的比较

A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB RAM的比较

Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Avant Technology J642GU42J9266N4 16GB
Avant Technology J642GU42J9266N4 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G26C16S4B.8FD 8GB
Crucial Technology BL8G26C16S4B.8FD 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Transcend Information TS2GLH64V4B 16GB
Transcend Information TS2GLH64V4B 16GB
内存RAM
Crucial Technology CT51264BF160BJ.M8F 4GB
Crucial Technology CT51264BF160BJ.M8F 4GB
Kingston ASU21D4U5S8MB-8 8GB
Kingston ASU21D4U5S8MB-8 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston HP26D4S9S1ME-4 4GB
Kingston HP26D4S9S1ME-4 4GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-2666C19-8GRS 8GB
G Skill Intl F4-2666C19-8GRS 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Avant Technology J644GU44J1293NF 32GB
Avant Technology J644GU44J1293NF 32GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Kingston HP24D4S7S8MBP-8 8GB
Kingston HP24D4S7S8MBP-8 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M386A8K40BM1-CRC 64GB
Samsung M386A8K40BM1-CRC 64GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM