Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology BL8G24C16U4B.8FD 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Crucial Technology BL8G24C16U4B.8FD 8GB

Crucial Technology BL8G24C16U4B.8FD 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

Crucial Technology BL8G24C16U4B.8FD 8GB

需要考虑的原因
Crucial Technology BL8G24C16U4B.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 59

左右 -48% 更低的延时
更快的读取速度，GB/s

9.3 4

测试中的平均数值
更快的写入速度，GB/s

6.4 2,123.3

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BL8G24C16U4B.8FD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 40
读取速度，GB/s

4,833.8 9.3
写入速度，GB/s

2,123.3 6.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2117

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Apacer Technology AQD-D4U8GN26-SE 8GB

Apacer Technology AQD-D4U8GN26-SE 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3600C17-8GVK 8GB

G Skill Intl F4-3600C17-8GVK 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Kingston KTP9W1-MID 16GB

Kingston KTP9W1-MID 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9905744-006.A00G 16GB

Kingston 9905744-006.A00G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Transcend Information JM2400HSB-8G 8GB

Transcend Information JM2400HSB-8G 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Kingston HP24D4U7S8MD-8 8GB

Kingston HP24D4U7S8MD-8 8GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

G Skill Intl F4-4600C18-8GTRS 8GB

G Skill Intl F4-4600C18-8GTRS 8GB