Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology BL8G32C16U4R.M8FE1 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Crucial Technology BL8G32C16U4R.M8FE1 8GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值
更快的写入速度，GB/s

2,123.3 14.8

测试中的平均数值

Crucial Technology BL8G32C16U4R.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4R.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 59

左右 -90% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 31
读取速度，GB/s

4,833.8 18.0
写入速度，GB/s

2,123.3 14.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 3497

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology BL8G32C16U4R.M8FE1 8GB

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SK Hynix HMAA4GU6AJR8N-XN 32GB

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Samsung M393B2G70BH0-YK0 16GB

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Kingston ACR24D4S7S1MB-4 4GB

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Crucial Technology CT8G4SFS8266.C8FD1 8GB

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G Skill Intl F4-3733C17-16GTZSW 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Corsair CM4X4GF2133C15S2 4GB

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Samsung M471B5173DB0-YK0 4GB

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G Skill Intl F4-3200C16-8GTZSW 8GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Corsair CMD64GX4M8A2400C14 8GB

Corsair CMD64GX4M8A2400C14 8GB