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Samsung M3 78T2863EHS-CF7 1GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB

Samsung M3 78T2863EHS-CF7 1GB vs Essencore Limited IM4AGU88N26-GIIHA0 16GB

总分
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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Essencore Limited IM4AGU88N26-GIIHA0 16GB

Essencore Limited IM4AGU88N26-GIIHA0 16GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.4
    测试中的平均数值
Essencore Limited IM4AGU88N26-GIIHA0 16GB 需要考虑的原因
Essencore Limited IM4AGU88N26-GIIHA0 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 59
    左右 -16% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 2,123.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 51
  • 读取速度，GB/s
    4,833.8 left arrow 16.4
  • 写入速度，GB/s
    2,123.3 left arrow 9.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    731 left arrow 2336

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Essencore Limited IM4AGU88N26-GIIHA0 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3600C14-16GVKA 16GB
G Skill Intl F4-3600C14-16GVKA 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Samsung M47472K43DB1-CTD 16GB
Samsung M47472K43DB1-CTD 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-2400C15-16GTZR 16GB
G Skill Intl F4-2400C15-16GTZR 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Lenovo LMKU8G68AHFHD-32A 8GB
Lenovo LMKU8G68AHFHD-32A 8GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
V-Color Technology Inc. TA48G30S815GK 8GB
V-Color Technology Inc. TA48G30S815GK 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM