Samsung M3 78T2863EHS-CF7 1GB vs Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.3

测试中的平均数值
更快的写入速度，GB/s

2,123.3 11.5

测试中的平均数值

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 59

左右 -64% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 36
读取速度，GB/s

4,833.8 15.3
写入速度，GB/s

2,123.3 11.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2942

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Corsair CMD16GX4M4B3200C15 4GB

Corsair CMD16GX4M4B3200C15 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965600-023.A00G 16GB

Kingston 9965600-023.A00G 16GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Corsair CMW16GX4M2D3000C16 8GB

Corsair CMW16GX4M2D3000C16 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Transcend Information JM2666HLG-16GK 8GB

Transcend Information JM2666HLG-16GK 8GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB