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Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905624-044.A00G 8GB

Samsung M3 78T2863EHS-CF7 1GB vs Kingston 9905624-044.A00G 8GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Kingston 9905624-044.A00G 8GB

Kingston 9905624-044.A00G 8GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 12.8
    测试中的平均数值
Kingston 9905624-044.A00G 8GB 需要考虑的原因
Kingston 9905624-044.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 59
    左右 -111% 更低的延时
  • 更快的写入速度，GB/s
    6.1 left arrow 2,123.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905624-044.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 28
  • 读取速度，GB/s
    4,833.8 left arrow 12.8
  • 写入速度，GB/s
    2,123.3 left arrow 6.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    731 left arrow 1974

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Kingston 9905624-044.A00G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905624-044.A00G 8GB
Kingston 9905624-044.A00G 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston KHX3466C19D4/16G 16GB
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G Skill Intl F4-2400C15Z8GNT 8GB
内存RAM