Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3000C15-4GTZ 4GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值

G Skill Intl F4-3000C15-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 69

左右 -165% 更低的延时
更快的写入速度，GB/s

11.5 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3000C15-4GTZ 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 26
读取速度，GB/s

4,217.2 14.9
写入速度，GB/s

1,857.7 11.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B2G70BH0-CH9 16GB

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Crucial Technology CT51264BA1339.D16F 4GB

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

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G Skill Intl F4-3000C16-8GTZR 8GB

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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Samsung 1600 CL10 Series 8GB

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Kingston 9905702-082.A00G 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB