Samsung M3 78T2863QZS-CF7 1GB vs Gloway International Co. Ltd. TYP4U3200E16082C 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.5

测试中的平均数值

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYP4U3200E16082C 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 69

左右 -77% 更低的延时
更快的写入速度，GB/s

10.6 1,857.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 39
读取速度，GB/s

4,217.2 17.5
写入速度，GB/s

1,857.7 10.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 2600

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV4GX3M1B1600C11 4GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Samsung M3 78T2863QZS-CF7 1GB

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Gloway International Co. Ltd. TYP4U3200E16082C 8GB

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Kingston 9905403-174.A00LF 2GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

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Crucial Technology BLT8G4D30AETA.K16FD 8GB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

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Crucial Technology CT16G4DFRA32A.C16FP 16GB

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