Samsung M3 78T2953EZ3-CF7 1GB vs A-DATA Technology AO1P26KCST2-BZISHC 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值

A-DATA Technology AO1P26KCST2-BZISHC 16GB

需要考虑的原因
A-DATA Technology AO1P26KCST2-BZISHC 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 58

左右 -61% 更低的延时
更快的写入速度，GB/s

14.2 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 36
读取速度，GB/s

4,241.0 15.5
写入速度，GB/s

1,950.7 14.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology AQD-D4U8GN26-SE 8GB

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Samsung M471B5273DH0-CK0 4GB

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AMD R7416G2133U2S 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

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Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

G Skill Intl F4-2800C15-16GRKD 16GB

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