Samsung M3 78T2953EZ3-CF7 1GB vs Avant Technology W6451U48J7240N6 4GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

低于PassMark测试中的延时，ns

58 75

左右 23% 更低的延时
更快的读取速度，GB/s

4 14.7

测试中的平均数值

Avant Technology W6451U48J7240N6 4GB

需要考虑的原因
Avant Technology W6451U48J7240N6 4GB

报告一个错误

更快的写入速度，GB/s

6.4 1,950.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Avant Technology W6451U48J7240N6 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 75
读取速度，GB/s

4,241.0 14.7
写入速度，GB/s

1,950.7 6.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

651 1590

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Essencore Limited KD48GU880-36A180Z 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology BL16G32C16U4BL.16FE 16GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Kingston 99U5584-017.A00LF 4GB

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G Skill Intl F4-3000C16-8GISB 8GB

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Corsair CMD16GX4M4B3200C14 4GB

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Samsung M471B5673FH0-CF8 2GB

Samsung M393A1G40EB1-CPB 8GB

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Samsung M393B5270CH0-CH9 4GB

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G Skill Intl F4-3800C14-8GTZN 8GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Samsung M393B1K70CH0-CH9 8GB

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Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB