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Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB

Samsung M3 78T2953EZ3-CF7 1GB vs Crucial Technology BL16G32C16U4W.M8FB1 16GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.7
    测试中的平均数值
Crucial Technology BL16G32C16U4W.M8FB1 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4W.M8FB1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 58
    左右 -81% 更低的延时
  • 更快的写入速度，GB/s
    14.6 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 32
  • 读取速度，GB/s
    4,241.0 left arrow 18.7
  • 写入速度，GB/s
    1,950.7 left arrow 14.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    651 left arrow 3659

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB RAM的比较

Smart Modular SG564568FG8N6KF-Z2 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Kingston 9905624-033.A00G 8GB
Kingston 9905624-033.A00G 8GB
Corsair CMD32GX4M4A2400C12 8GB
Corsair CMD32GX4M4A2400C12 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-4400C19-32GTZR 32GB
G Skill Intl F4-4400C19-32GTZR 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F4-3600C16-16GTRS 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
内存RAM
Crucial Technology CT102464BF160B.16F 8GB
Crucial Technology CT102464BF160B.16F 8GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3600C17-8GTZKW 8GB
G Skill Intl F4-3600C17-8GTZKW 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Mushkin 99[2/7/4]199F 8GB
Mushkin 99[2/7/4]199F 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM