Samsung M3 78T2953EZ3-CF7 1GB vs Crucial Technology BLT4G4D30AETA.K8FE 4GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.5

测试中的平均数值

Crucial Technology BLT4G4D30AETA.K8FE 4GB

需要考虑的原因
Crucial Technology BLT4G4D30AETA.K8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 58

左右 -190% 更低的延时
更快的写入速度，GB/s

14.3 1,950.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 20
读取速度，GB/s

4,241.0 18.5
写入速度，GB/s

1,950.7 14.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

651 2965

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AX4S2800316G18-B 16GB

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EVGA 16G-D4-2400-MR 8GB

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Kingston CBD32D4S2D8HD-16 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston KF2933C17S4/16G 16GB

Kingston KF2933C17S4/16G 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-4000C17-16GTRSB 16GB

G Skill Intl F4-4000C17-16GTRSB 16GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

G Skill Intl F4-2133C15-8GIS 8GB

G Skill Intl F4-2133C15-8GIS 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB