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Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-4400C18-8GTZRC 8GB

Samsung M3 78T2953EZ3-CF7 1GB vs G Skill Intl F4-4400C18-8GTZRC 8GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 22.3
    测试中的平均数值
G Skill Intl F4-4400C18-8GTZRC 8GB 需要考虑的原因
G Skill Intl F4-4400C18-8GTZRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 58
    左右 -93% 更低的延时
  • 更快的写入速度，GB/s
    16.3 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-4400C18-8GTZRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 30
  • 读取速度，GB/s
    4,241.0 left arrow 22.3
  • 写入速度，GB/s
    1,950.7 left arrow 16.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    651 left arrow 3697

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-4400C18-8GTZRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston 9905624-019.A00G 8GB
Kingston 9905624-019.A00G 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CMK16GX4M4B3000C15 4GB
Corsair CMK16GX4M4B3000C15 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Super Talent F3200UA8G 8GB
Super Talent F3200UA8G 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston XG9XKG-MIE 16GB
Kingston XG9XKG-MIE 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M393A2K40CB2-CTD 16GB
Samsung M393A2K40CB2-CTD 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-2400C15-8GFX 8GB
G Skill Intl F4-2400C15-8GFX 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3600C17-16GTZSW 16GB
G Skill Intl F4-3600C17-16GTZSW 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston KHX2400C15/8G 8GB
Kingston KHX2400C15/8G 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 9905734-082.A00G 16GB
Kingston 9905734-082.A00G 16GB
内存RAM