Samsung M3 78T2953EZ3-CF7 1GB vs Kingston 9905712-048.A00G 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Kingston 9905712-048.A00G 16GB

Kingston 9905712-048.A00G 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.3

测试中的平均数值

Kingston 9905712-048.A00G 16GB

需要考虑的原因
Kingston 9905712-048.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 58

左右 -93% 更低的延时
更快的写入速度，GB/s

8.5 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Kingston 9905712-048.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 30
读取速度，GB/s

4,241.0 14.3
写入速度，GB/s

1,950.7 8.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 2579

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A1K43DB1-CWE 8GB

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Heoriady M471A1K43BB1-CRC 16GB

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A-DATA Technology DDR3 1600 4GB

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A-DATA Technology DDR4 3200 2OZ 4GB

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Samsung M391B5673FH0-CH9 2GB

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Corsair CM4X4GF2400C16N2 4GB

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SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Samsung M471B5173QH0-YK0 4GB

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Maxsun MSD416G26Q3 16GB

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Kingston 99U5700-028.A00G 8GB

Kingston 99U5700-028.A00G 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Gloway International (HK) STKD4GAM2400-F 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK32GX4M2A2400C14 16GB

Corsair CMK32GX4M2A2400C14 16GB