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Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB

Samsung M3 78T2953EZ3-CF7 1GB vs Micron Technology 36ASF2G72LZ-2G1A1 16GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 11.4
    测试中的平均数值
Micron Technology 36ASF2G72LZ-2G1A1 16GB 需要考虑的原因
Micron Technology 36ASF2G72LZ-2G1A1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 58
    左右 -87% 更低的延时
  • 更快的写入速度，GB/s
    8.8 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 31
  • 读取速度，GB/s
    4,241.0 left arrow 11.4
  • 写入速度，GB/s
    1,950.7 left arrow 8.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2371

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SpecTek Incorporated ?????????????????? 2GB
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Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMSX64GX4M4A2666C18 16GB
Corsair CMSX64GX4M4A2666C18 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX3000C15/16GX 16GB
Kingston KHX3000C15/16GX 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2133C15-4GRS 4GB
G Skill Intl F4-2133C15-4GRS 4GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Good Wealth Technology Ltd. 8GB
Good Wealth Technology Ltd. 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMD8GX4M2B3466C18 4GB
Corsair CMD8GX4M2B3466C18 4GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-3866C18-4GTZ 4GB
G Skill Intl F4-3866C18-4GTZ 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Apacer Technology 78.CAGP7.AZC0B 8GB
Apacer Technology 78.CAGP7.AZC0B 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Kingston KHX3200C20S4/16GX 16GB
Kingston KHX3200C20S4/16GX 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2666C15-8GVR 8GB
G Skill Intl F4-2666C15-8GVR 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Corsair CMD16GX4M2B3866C18 8GB
Corsair CMD16GX4M2B3866C18 8GB
内存RAM