Samsung M3 78T2953EZ3-CF7 1GB vs SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.5

测试中的平均数值

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 58

左右 -107% 更低的延时
更快的写入速度，GB/s

16.1 1,950.7

测试中的平均数值
更高的内存带宽，mbps

23400 6400

左右 3.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 28
读取速度，GB/s

4,241.0 17.5
写入速度，GB/s

1,950.7 16.1
内存带宽，mbps

6400 23400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 800 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

651 3758

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CM4X8GF2400C16N2 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston MSI24D4U7S8MB-8 8GB

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Kingston 9965433-034.A00LF 4GB

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G Skill Intl F4-3200C16-8GTZR 8GB

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Crucial Technology BL32G32C16U4WL.M16FB 32GB

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Kingston KP4T2F-PSB 4GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M386A2G40DB0-CPB 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Patriot Memory (PDP Systems) 3600 C18 Series 32GB

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Kingston 99U5734-036.A00G 16GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-3600C18-8GVK 8GB

G Skill Intl F4-3600C18-8GVK 8GB

Crucial Technology CT102464BF160B.16F 8GB

Crucial Technology CT102464BF160B.16F 8GB

Apacer Technology GD2.1140CH.001 4GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB