Samsung M3 78T2953EZ3-CF7 1GB vs SK Hynix HMA82GU6DJR8N-VK 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

SK Hynix HMA82GU6DJR8N-VK 16GB

SK Hynix HMA82GU6DJR8N-VK 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14

测试中的平均数值

SK Hynix HMA82GU6DJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GU6DJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

43 58

左右 -35% 更低的延时
更快的写入速度，GB/s

12.3 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

SK Hynix HMA82GU6DJR8N-VK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 43
读取速度，GB/s

4,241.0 14.0
写入速度，GB/s

1,950.7 12.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 2867

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMD16GX4M4B3200C16 4GB

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Kingston KHX318C10FR/8G 8GB

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Corsair CMK32GX4M4B3200C16 8GB

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Corsair CMV8GX4M1L2400C16 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Golden Empire CL16-16-16 D4-3000 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Avant Technology W6451U67J7240NB 4GB

Avant Technology W6451U67J7240NB 4GB

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G Skill Intl F5-5600J4040C16G 16GB

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G Skill Intl F4-3600C16-32GTZR 32GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB